A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) UTB SOI MOSFETs including substrate induced surface potential effects

Frontiers of silicon-on-insulator

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Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

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Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs

Qian Xie, Chia-Jung Lee, Jun Xu et al. · IEEE Transactions on Electron Devices · 2013 · 115 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs

M.J. van Dort, P.H. Woerlee, Andrew J. Walker et al. · IEEE Transactions on Electron Devices · 1992 · 105 citations

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BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control

Sourabh Khandelwal, Yogesh Singh Chauhan, Darsen D. Lu et al. · IEEE Transactions on Electron Devices · 2012 · 105 citations

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