IEEE Transactions on Electron Devices · 2012 · 105 citations · 23 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsSemiconductor PhysicsCircuit SimulationDrain-induced Barrier LoweringMosfet ModelingQuantum Confinement EffectsSelf-heating EffectsSelf-heating ModelingSurface PotentialVelocity Saturation
In this paper, we present an accurate and computationally efficient model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control. This work advances previous works in terms of numerical accuracy, computational efficiency, and behavior of the higher order derivatives of the drain current. We propose a consistent analytical solution for the calculation of front- and back-gate surface potentials and inversion charge. The accuracy of our surface potential calculation is on the order of nanovolts. The drain current model includes velocity saturation, channel-length modulation, mobility degradation, quantum confinement effect, drain-induced barrier lowering, and self-heating effect. The model has correct behavior for derivatives of the drain current and shows an excellent agreement with experimental data for long- and short-channel devices with 8-nm-thin silicon body and 10-nm-thin BOX.
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A charge-sheet model of the MOSFET
J.R. Brews · Solid-State Electronics · 1978 · 555 citations
Engineering, Computer Engineering, Electrical Engineering +12
Quantum-mechanical effects on the threshold voltage of ultrathin-SOI nMOSFETs
Yasuhisa Ōmura, S. Horiguchi, M. Tabe et al. · IEEE Electron Device Letters · 1993 · 275 citations