P.H. Woerlee

RF-CMOS performance trends

P.H. Woerlee, M.J. Knitel, R. van Langevelde et al. · IEEE Transactions on Electron Devices · 2001 · 332 citations

Limited Linearity Degradation, Electrical Engineering, Engineering +12

A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions

M.J. van Dort, P.H. Woerlee, Andrew J. Walker · Solid-State Electronics · 1994 · 273 citations

Device Modeling, Electrical Engineering, Engineering +9

Non-local impact ionization in silicon devices

J.W. Slotboom, G. Streutker, M.J. van Dort et al. · 2002 · 105 citations

Device Modeling, Device Simulators, Electrical Engineering +15

Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs

M.J. van Dort, P.H. Woerlee, Andrew J. Walker et al. · IEEE Transactions on Electron Devices · 1992 · 105 citations

Engineering, Substrate Doping, Semiconductor Device +16

Accurate thermal noise model for deep-submicron CMOS

A.J. Scholten, H. J. Tromp, L.F. Tiemeijer et al. · 2003 · 100 citations

Engineering, Vlsi Design, Carrier Mobility +16