A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions

Electronic properties of two-dimensional systems

Tsuneya Ando, A. B. Fowler, Frank Stern · Reviews of Modern Physics · 1982 · 7.4K citations

Natural Sciences, Chemistry, Physics +16

Measurements of bandgap narrowing in Si bipolar transistors

J.W. Slotboom, H.C. de Graaff · Solid-State Electronics · 1976 · 752 citations

Engineering, Electrical Engineering, Physics +13

MOS device modeling at 77 K

S. Selberherr · IEEE Transactions on Electron Devices · 1989 · 179 citations

Engineering, Electrical Engineering, Materials Science +17

Semiconductor device modelling from the numerical point of view

S. J. Polak, C. den Heijer, W.H.A. Schilders et al. · International Journal for Numerical Methods in Engineering · 1987 · 164 citations

Engineering, Computational Engineering, Electrical Engineering +13

Quantum effects in Si n-MOS inversion layer at high substrate concentration

Yasuyuki Ohkura · Solid-State Electronics · 1990 · 130 citations

Engineering, Materials Engineering, Materials Science +16