A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions - Concepedia

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A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions

273

Citations

8

References

1994

Year

M.J. van Dort, P.H. Woerlee, Andrew J. Walker

Solid-State Electronics

Device ModelingElectrical EngineeringEngineeringPhysicsNanoelectronicsBias Temperature InstabilityInversion ConditionsHeavily-doped Silicon MosfetsMicroelectronicsQuantisation EffectsSilicon On InsulatorSemiconductor Device

References

	Year	Citations

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