M.J. van Dort

A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions

M.J. van Dort, P.H. Woerlee, Andrew J. Walker · Solid-State Electronics · 1994 · 273 citations

Engineering, Computer Engineering, Electrical Engineering +17

Non-local impact ionization in silicon devices

J.W. Slotboom, G. Streutker, M.J. van Dort et al. · 2002 · 105 citations

Engineering, Electrical Engineering, Electronic Materials +16

Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs

M.J. van Dort, P.H. Woerlee, Andrew J. Walker et al. · IEEE Transactions on Electron Devices · 1992 · 105 citations

Engineering, Electrical Engineering, Materials Science +17

High Imminent Vertebral Fracture Risk in Subjects With COPD With a Prevalent or Incident Vertebral Fracture

M.J. van Dort, Piet Geusens, Johanna H. M. Driessen et al. · Journal of Bone and Mineral Research · 2018 · 24 citations · Full text

Medicine, Clinical Sciences, Radiology +9

Quantum-mechanical threshold voltage shifts of MOSFETs caused by high levels of channel doping

M.J. van Dort, P.H. Woerlee, Andrew J. Walker et al. · 2002 · 21 citations

Engineering, Electrical Engineering, Microelectronics +16