M.J. van Dort

A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions

M.J. van Dort, P.H. Woerlee, Andrew J. Walker · Solid-State Electronics · 1994 · 273 citations

Device Modeling, Electrical Engineering, Engineering +9

Non-local impact ionization in silicon devices

J.W. Slotboom, G. Streutker, M.J. van Dort et al. · 2002 · 105 citations

Device Modeling, Device Simulators, Electrical Engineering +15

Influence of high substrate doping levels on the threshold voltage and the mobility of deep-submicrometer MOSFETs

M.J. van Dort, P.H. Woerlee, Andrew J. Walker et al. · IEEE Transactions on Electron Devices · 1992 · 105 citations

Engineering, Substrate Doping, Semiconductor Device +16

High Imminent Vertebral Fracture Risk in Subjects With COPD With a Prevalent or Incident Vertebral Fracture

M.J. van Dort, Piet Geusens, Johanna H. M. Driessen et al. · Journal of Bone and Mineral Research · 2018 · 24 citations · Full text

Quantum-mechanical threshold voltage shifts of MOSFETs caused by high levels of channel doping

M.J. van Dort, P.H. Woerlee, Andrew J. Walker et al. · 2002 · 21 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +15