Source-drain Engineering

Source-Drain Engineering is a device design methodology in Metal-Oxide-Semiconductor Field-Effect Transistors that involves the intentional modification of the source and drain regions' doping profiles, materials, or geometries to mitigate short-channel effects and enhance carrier transport, thereby improving transistor performance and scalability.

368

Publications

12.4K

Citations

1.7K

Authors

284

Institutions

Publications per year

2017–2026

Parents

Device ScalingMetal-oxide-semiconductor Field-effect Transistors

Publications

368

Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge · Nature · 2011 · 1K citations

Engineering, Electrical Engineering, Materials Science +13

A New Method to Determine Effective MOSFET Channel Length

Kazuo Terada, Hiroki Muta · Japanese Journal of Applied Physics · 1979 · 282 citations

Engineering, Electrical Engineering, Circuit Theory +14

Extension and source/drain design for high-performance finFET devices

J. Kedzierski, M. Ieong, E. Nowak et al. · IEEE Transactions on Electron Devices · 2003 · 244 citations

Engineering, Electrical Engineering, Electronic Materials +16

Reduction of kink effect in thin-film SOI MOSFETs

J.-P. Colinge · IEEE Electron Device Letters · 1988 · 217 citations

Engineering, Electrical Engineering, Microelectronics +14

Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

Eng-Huat Toh, Grace Huiqi Wang, Ganesh S. Samudra et al. · Journal of Applied Physics · 2008 · 196 citations

Engineering, Electrical Engineering, Materials Science +17

1–5 of 368

Authors

1.7K

YY
Yee‐Chia Yeo
National University of Singapore, Singapore
21 publications · 627 citations
14
h-index
GS
Ganesh S. Samudra
National University of Singapore, Singapore
10 publications · 403 citations
10
h-index
RL
Roger Loo
IMEC, Belgium
10 publications · 266 citations
10
h-index
ST
Shinichi Takagi
The University of Tokyo, Japan
9 publications · 469 citations
9
h-index
KC
Krishna C. Saraswat
Stanford University, United States
8 publications · 259 citations
8
h-index

1–5 of 1.7K

Institutions

284

1–8 of 284

Venues

IEEE Electron Device Letters
47 publications · 1.7K citations
23
h-index
IEEE Transactions on Electron Devices
46 publications · 1.6K citations
21
h-index
Solid-State Electronics
33 publications · 938 citations
18
h-index
Superlattices and Microstructures
11 publications · 346 citations
11
h-index
Silicon
12 publications · 255 citations
11
h-index

1–5