IEEE Electron Device Letters · 1988 · 217 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesThin FilmsDevice ModelingDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsSemiconductor PhysicsSemiconductor Thin FilmsThin-film TransistorsElectric Field DistributionField-effect Transistor SimulationFully Depleted Silicon-on-insulator TransistorsKink InstabilitySource-drain EngineeringThin-film Transistor Modeling
Numerical simulation is used to show that potential and electric field distribution within thin, fully depleted SOI devices is quite different from that observed within thicker, partially depleted devices. Reduction of drain electric field and of source potential barrier brings about a dramatic decrease of kink effect.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Improved subthreshold characteristics of n-channel SOI transistors
J. Davis, A.E. Glaccum, K.J. Reeson et al. · IEEE Electron Device Letters · 1986 · 87 citations