Low temperature characterization of mobility in 14 nm FD-SOI CMOS devices under interface coupling conditions

On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

S. Takagi, Akira Toriumi, M. Iwase et al. · IEEE Transactions on Electron Devices · 1994 · 1.5K citations

Engineering, Electrical Engineering, Materials Science +17

Carrier transport near the Si/SiO2 interface of a MOSFET

W. Hänsch, Th. Vogelsang, R. Kircher et al. · Solid-State Electronics · 1989 · 207 citations

Engineering, Electrical Engineering, Materials Science +14

A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

Tsutomu Tezuka, Naoharu Sugiyama, Tomohisa Mizuno et al. · Japanese Journal of Applied Physics · 2001 · 185 citations

Engineering, Electrical Engineering, Materials Engineering +16

Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

M. Cassé, L. Thévenod, B. Guillaumot et al. · IEEE Transactions on Electron Devices · 2006 · 131 citations

Engineering, Electrical Engineering, Physics +17

Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

Antoine Cros, K. Romanjek, Dominique Fleury et al. · 2006 · 121 citations

Engineering, Electrical Engineering, Materials Science +17