Mobility Fluctuations

Mobility Fluctuations is a physical phenomenon in semiconductor devices characterized by temporal variations in carrier mobility due to random scattering events and localized potential fluctuations, distinguishing it from other noise sources by its direct dependence on the dynamic modulation of charge transport properties.

337

Publications

18.5K

Citations

1.1K

Authors

371

Institutions

Publications per year

2017–2026

35

Authors

1.1K

  1. GG
    G. Ghibaudo

    Institut de Microélectronique, Electromagnétisme et Photonique, France

    16 publications · 1.2K citations

    13

    h-index

  2. LV
    L.K.J. Vandamme

    Eindhoven University of Technology, Netherlands

    9 publications · 1.8K citations

    9

    h-index

  3. TK
    T.G.M. Kleinpenning

    Eindhoven University of Technology, Netherlands

    8 publications · 1.4K citations

    8

    h-index

  4. AR
    A. R. Brown

    University of Glasgow, United Kingdom

    6 publications · 209 citations

    6

    h-index

  5. AV
    A. van der Ziel

    University of Minnesota, United States

    6 publications · 196 citations

    6

    h-index

1–5 of 1.1K

Venues

  1. IEEE Transactions on Electron Devices

    30 publications · 4.1K citations

    22

    h-index

  2. Journal of Applied Physics

    33 publications · 1K citations

    21

    h-index

  3. Applied Physics Letters

    33 publications · 927 citations

    20

    h-index

  4. IEEE Electron Device Letters

    17 publications · 1K citations

    15

    h-index

  5. Solid-State Electronics

    20 publications · 1.2K citations

    15

    h-index

1–5