2002 · 18 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignDevice CharacterizationDevice ModelingDevice SimulationDopingSemiconductor Device MaterialsBody EffectCapacitance-voltage CharacteristicsDoping ProfilesMosfet ModelingQuantum Mechanical ModelSemiconductor Doping ProfilesThreshold VoltageThreshold Voltage Modeling
Accurate doping profiles are needed to simulate device characteristics. We use capacitance-voltage curves to interrogate the doping profiles, threshold voltage, body effect, poly depletion and oxide thickness on a range of technology generations down to 0.18 /spl mu/m. Proper modeling of both transient enhanced diffusion (TED) and quantum mechanical (QM) effects is essential to ensure the simulations match all aspects of the C-V data. The agreement confirms that the predicted doping profiles are accurate. Device simulations using these doping profiles give the correct threshold voltage, body effect and DIBL characteristics.
5
Explanation of reverse short channel effect by defect gradients
C.S. Rafferty, H.-H. Vuong, S. A. Eshraghi et al. · 2002 · 72 citations
Engineering, Electrical Engineering, Electronic Materials +16