Paul Vande Voorde

The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFETs

Baolei Cheng, Min Cao, A. Inani et al. · IEEE Transactions on Electron Devices · 1999 · 297 citations

Engineering, Semiconductor Device, Sub-100 Nm Mosfets +16

Boron diffusion and penetration in ultrathin oxide with poly-Si gate

Min Cao, Paul Vande Voorde, M G C Cox et al. · IEEE Electron Device Letters · 1998 · 85 citations

Materials Science, Materials Engineering, Electrical Engineering +12

MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

Changhoon Choi, Jung-Suk Goo, Tae-Young Oh et al. · IEEE Electron Device Letters · 1999 · 70 citations

Materials Science, Device Modeling, Electrical Engineering +14

Indium transient enhanced diffusion

Peter B. Griffin, Min Cao, Paul Vande Voorde et al. · Applied Physics Letters · 1998 · 38 citations

Electrical Engineering, Indium Diffusion, Engineering +15

Design considerations of high-κ gate dielectrics for sub-0.1-μm MOSFET's

Baolei Cheng, Min Cao, Paul Vande Voorde et al. · IEEE Transactions on Electron Devices · 1999 · 33 citations

Potential Impact, Electrical Engineering, Semiconductor Device +11