H.-H. Vuong

The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length

J. M. Hergenrother, D. Monroe, F. Klemens et al. · 2003 · 91 citations

Engineering, Electrical Engineering, Materials Science +17

Low leakage, ultra-thin gate oxides for extremely high performance sub-100 nm nMOSFETs

G. Timp, Aditya Agarwal, F.H. Baumann et al. · 2002 · 85 citations

Engineering, Electrical Engineering, Materials Science +17

Explanation of reverse short channel effect by defect gradients

C.S. Rafferty, H.-H. Vuong, S. A. Eshraghi et al. · 2002 · 72 citations

Engineering, Electrical Engineering, Electronic Materials +16

Dopant dose loss at the Si–SiO2 interface

H.-H. Vuong, C.S. Rafferty, S. A. Eshraghi et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

H.-H. Vuong, H.-J. Gossmann, C.S. Rafferty et al. · Journal of Applied Physics · 1995 · 31 citations

Engineering, Materials Engineering, Materials Science +17