C.S. Rafferty - Concepedia

Author

C.S. Rafferty

AT&T (United States)ORCID

Also Known As

C. Rafferty, C. S. Rafferty, C.S Rafferty, C.S. Rafferty, Callum Rafferty, Chiara Rafferty, Rafferty, Chiara

116

Publications

Citations

H-Index

Concepts

All Affiliations

AT&T (United States)Stanford University Universidad de Valladolid Oak Ridge National Laboratory Toshiba (Japan)

About

C.S. Rafferty is an author at AT&T (United States) specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	56	2.8K
2	Applied Physics	26	46	2.5K
3	Natural Sciences	4	4	196
4	Biomedical Engineering	2	2	74
5	Education	1	1	21

C.S. Rafferty

Publications

2.8K

Citations

H-Index

Page 1

	Year	Citations
Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham, Journal of Applied Physics Materials ScienceSemiconductorsSi ImplantsIon ImplantationEngineering	1997	614
B diffusion and clustering in ion implanted Si: The role of B cluster precursors Lourdes Pelaz, M. Jaraı́z, George H. Gilmer, Applied Physics Letters EngineeringB AtomSilicon On InsulatorB DiffusionIon Implantation	1997	216
B cluster formation and dissolution in Si: A scenario based on atomistic modeling Lourdes Pelaz, George H. Gilmer, H.-J. Gossmann, Applied Physics Letters EngineeringSilicon On InsulatorSiliceneMaterials ScienceMaterials Engineering	1999	156
Simulation of cluster evaporation and transient enhanced diffusion in silicon C.S. Rafferty, George H. Gilmer, M. Jaraı́z, Applied Physics Letters EngineeringImplant EnergySilicon On InsulatorMolecular DynamicsNanoscale Modeling	1996	151
Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities H.‐J. Gossmann, C.S. Rafferty, H. S. Luftman, Applied Physics Letters EngineeringDoping SuperlatticeDry OxidationSilicon On InsulatorSemiconductor Nanostructures	1993	91
The Vertical Replacement-Gate (VRG) MOSFET: a 50-nm vertical MOSFET with lithography-independent gate length J. M. Hergenrother, D. Monroe, F. Klemens, Lithography-independent Gate LengthAdvanced Planar MosfetsElectrical EngineeringEngineeringVlsi Design	2003	91
The role of the surface in transient enhanced diffusion D. R. Lim, C.S. Rafferty, F. Klemens Applied Physics Letters Materials ScienceEnhanced DiffusionIon ImplantationPoint DefectsEngineering	1995	90
Iterative methods in semiconductor device simulation C.S. Rafferty, M.R. Pinto, R.W. Dutton IEEE Transactions on Electron Devices Numerical AnalysisEngineeringNewton EquationsNumerical ComputationSparse Gaussian Elimination	1985	75
Explanation of reverse short channel effect by defect gradients C.S. Rafferty, H.-H. Vuong, S. A. Eshraghi, EngineeringIntegrated CircuitsDefect ToleranceSemiconductor DeviceSemiconductors	2002	72
Activation and deactivation of implanted B in Si Lourdes Pelaz, V. C. Venezia, H.-J. Gossmann, Applied Physics Letters Materials ScienceEngineeringCrystalline DefectsPhysicsB Clustering	1999	63

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