C.S. Rafferty

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 614 citations

Materials Science, Semiconductors, Si Implants +15

B diffusion and clustering in ion implanted Si: The role of B cluster precursors

Lourdes Pelaz, M. Jaraı́z, George H. Gilmer et al. · Applied Physics Letters · 1997 · 216 citations

Engineering, B Atom, Silicon On Insulator +16

B cluster formation and dissolution in Si: A scenario based on atomistic modeling

Lourdes Pelaz, George H. Gilmer, H.-J. Gossmann et al. · Applied Physics Letters · 1999 · 156 citations

Engineering, Silicon On Insulator, Silicene +17

Simulation of cluster evaporation and transient enhanced diffusion in silicon

C.S. Rafferty, George H. Gilmer, M. Jaraı́z et al. · Applied Physics Letters · 1996 · 151 citations

Engineering, Implant Energy, Silicon On Insulator +20

Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities

H.‐J. Gossmann, C.S. Rafferty, H. S. Luftman et al. · Applied Physics Letters · 1993 · 91 citations

Engineering, Doping Superlattice, Dry Oxidation +17