Concepedia

Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Kexin Deng, Sen Huang, Xinhua Wang, Qimeng Jiang, Haibo Yin, Jie Fan, Guanjun Jing, Wei Ke, Yingkui Zheng, Jingyuan Shi,

Applied Surface Science · 2023 · 15 citations · 37 references

DOI

Concepts

References

37

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

, , +17

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.7K citations

, , +17

GaN-on-Si Power Technology: Devices and Applications

Kevin J. Chen, Oliver D. Häberlen, Alex Lidow et al. · IEEE Transactions on Electron Devices · 2017 · 1.6K citations

, , +17

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

P. D. Ye, Bingzheng Yang, K.K. Ng et al. · Applied Physics Letters · 2005 · 498 citations

, , +17

Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N∕GaN grown by molecular-beam epitaxy

H. Zhang, Eric J Miller, Edward T. Yu · Journal of Applied Physics · 2006 · 361 citations

, , +17