Jie Fan

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

Sen Huang, Xinyu Liu, Xinhua Wang et al. · IEEE Transactions on Electron Devices · 2017 · 116 citations

Engineering, Electrical Engineering, Materials Engineering +17

An Enhancement-Mode GaN p-FET With Improved Breakdown Voltage

Hao Jin, Qimeng Jiang, Sen Huang et al. · IEEE Electron Device Letters · 2022 · 59 citations

Engineering, Electrical Engineering, Materials Science +15

Phase Transition and Superconductivity Enhancement in Se‐Substituted MoTe₂ Thin Films

Peiling Li, Jian Cui, Jiadong Zhou et al. · Advanced Materials · 2019 · 45 citations · Full text

Natural Sciences, Materials Science, Physics +17

Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking

Xuanwu Kang, Xinhua Wang, Sen Huang et al. · 2018 · 41 citations

Engineering, Electrical Engineering, Materials Science +16

Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with <i>in situ</i> remote plasma pretreatments

Fuqiang Guo, Sen Huang, Xinhua Wang et al. · Applied Physics Letters · 2021 · 36 citations

Engineering, Electrical Engineering, Materials Science +17