Xuanwu Kang

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

M. Van Hove, S. Boulay, S.R. Bahl et al. · IEEE Electron Device Letters · 2012 · 206 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +10

Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

Zhuangzhuang Hu, Hong Zhou, Qian Feng et al. · IEEE Electron Device Letters · 2018 · 166 citations

More Than 3, Electrical Engineering, Engineering +7

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

Sen Huang, Xinyu Liu, Xinhua Wang et al. · IEEE Transactions on Electron Devices · 2017 · 111 citations

Materials Engineering, Semiconductors, Electrical Engineering +14

AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility

Kai Cheng, Hu Liang, M. Van Hove et al. · Applied Physics Express · 2011 · 99 citations · Full text

Wide-bandgap Semiconductor, Mm Silicon, Electron Density +10

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

Sen Huang, Xinyu Liu, Xinhua Wang et al. · IEEE Electron Device Letters · 2016 · 99 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12