Fuqiang Guo

Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with <i>in situ</i> remote plasma pretreatments

Fuqiang Guo, Sen Huang, Xinhua Wang et al. · Applied Physics Letters · 2021 · 34 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures

Kexin Deng, Xinhua Wang, Sen Huang et al. · Applied Surface Science · 2020 · 22 citations

Materials Science, Low-pressure-chemical-vapor-deposited Sin /Iii-nitride, Engineering +4

Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

Yixu Yao, Sen Huang, Qimeng Jiang et al. · IEEE Electron Device Letters · 2021 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +12

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Yixu Yao, Qimeng Jiang, Sen Huang et al. · Applied Physics Letters · 2021 · 16 citations

Semiconductors, Deep-level Transient Spectroscopy, Electrical Engineering +12

Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering

Sen Huang, Xinhua Wang, Yixu Yao et al. · Applied Physics Reviews · 2024 · 15 citations · Full text