Yixu Yao

Selective Area Growth: A Promising Way for Recessed Gate GaN MOSFET With High Quality MOS Interface

Yue Zheng, Fiona Fan Yang, Lei He et al. · IEEE Electron Device Letters · 2016 · 27 citations

Wide-bandgap Semiconductor, Electrical Engineering, Promising Way +9

Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

Yixu Yao, Sen Huang, Qimeng Jiang et al. · IEEE Electron Device Letters · 2021 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +12

High Threshold Voltage Stability Enhancement-Mode GaN <i>p</i>-FETs Fabricated With PEALD-AlN Gate Interfacial Layer

Liu Wang, Sen Huang, Qimeng Jiang et al. · IEEE Electron Device Letters · 2024 · 20 citations

Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

Yixu Yao, Qimeng Jiang, Sen Huang et al. · Applied Physics Letters · 2021 · 16 citations

Semiconductors, Deep-level Transient Spectroscopy, Electrical Engineering +12

Threshold voltage instability in III-nitride heterostructure metal–insulator–semiconductor high-electron-mobility transistors: Characterization and interface engineering

Sen Huang, Xinhua Wang, Yixu Yao et al. · Applied Physics Reviews · 2024 · 15 citations · Full text