Haibo Yin

Theoretical study on InxGa1−xN/GaN quantum dots solar cell

Qingwen Deng, Xiaoliang Wang, Cuibai Yang et al. · Physica B Condensed Matter · 2010 · 47 citations

Theoretical Study, Engineering, Applied Physics +3

Suppression of Gate Leakage Current in <i>Ka</i>-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD

Sheng Zhang, Xinyu Liu, Wei Ke et al. · IEEE Transactions on Electron Devices · 2020 · 41 citations

Semiconductors, Compelling Gate Dielectric, Electrical Engineering +12

A novel strategy for GaN-on-diamond device with a high thermal boundary conductance

Fengwen Mu, Bin Xu, Xinhua Wang et al. · Journal of Alloys and Compounds · 2022 · 38 citations

Wide-bandgap Semiconductor, Gan-on-diamond Device, Electrical Engineering +7

Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with <i>in situ</i> remote plasma pretreatments

Fuqiang Guo, Sen Huang, Xinhua Wang et al. · Applied Physics Letters · 2021 · 34 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors

Sen Huang, Xinhua Wang, Xinyu Liu et al. · Journal of Applied Physics · 2019 · 33 citations

Oxide Heterostructures, Semiconductors, Electrical Engineering +15