Sheng Zhang

Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess

Yichuan Zhang, Sen Huang, Wei Ke et al. · IEEE Electron Device Letters · 2020 · 58 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Direct visualization of memory effects in artificial spin ice

Ian Gilbert, Gia-Wei Chern, Bryce Fore et al. · Physical Review B · 2015 · 54 citations · Full text

Artificial Spin Ice, Engineering, Magnetic Resonance +20

Active spintronic-metasurface terahertz emitters with tunable chirality

Changqin Liu, Shunjia Wang, Sheng Zhang et al. · Advanced Photonics · 2021 · 43 citations · Full text

Thz Photonics, Terahertz Technology, Engineering +17

Suppression of Gate Leakage Current in <i>Ka</i>-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD

Sheng Zhang, Xinyu Liu, Wei Ke et al. · IEEE Transactions on Electron Devices · 2020 · 41 citations

Semiconductors, Compelling Gate Dielectric, Electrical Engineering +12

Flexible generation of structured terahertz fields via programmable exchange-biased spintronic emitters

Shunjia Wang, Wentao Qin, Tongyang Guan et al. · eLight · 2024 · 38 citations · Full text

Thz Photonics, Terahertz Technology, Engineering +24