Yichuan Zhang

Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess

Yichuan Zhang, Sen Huang, Wei Ke et al. · IEEE Electron Device Letters · 2020 · 58 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Suppression of Gate Leakage Current in <i>Ka</i>-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD

Sheng Zhang, Xinyu Liu, Wei Ke et al. · IEEE Transactions on Electron Devices · 2020 · 41 citations

Semiconductors, Compelling Gate Dielectric, Electrical Engineering +12

High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz

Yichuan Zhang, Wei Ke, Sen Huang et al. · IEEE Electron Device Letters · 2018 · 36 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors

Sen Huang, Xinhua Wang, Xinyu Liu et al. · Journal of Applied Physics · 2019 · 33 citations

Oxide Heterostructures, Semiconductors, Electrical Engineering +15

Experimental Realization of Nonreciprocal Adiabatic Transfer of Phonons in a Dynamically Modulated Nanomechanical Topological Insulator

Tian Tian, Yichuan Zhang, Liang Zhang et al. · Physical Review Letters · 2022 · 30 citations

Phononic Excitations, Engineering, Experimental Realization +19