Yingkui Zheng

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

Sen Huang, Xinyu Liu, Xinhua Wang et al. · IEEE Transactions on Electron Devices · 2017 · 111 citations

Materials Engineering, Semiconductors, Electrical Engineering +14

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Yue Sun, Xuanwu Kang, Yingkui Zheng et al. · Electronics · 2019 · 94 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Robust SiN<sub><italic>x</italic></sub>/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN<sub><italic>x</italic></sub> Layer

Xinhua Wang, Sen Huang, Yingkui Zheng et al. · IEEE Electron Device Letters · 2015 · 74 citations

Semiconductors, Materials Science, Electrical Engineering +15

High RF Performance Enhancement-Mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique

Sen Huang, Xinyu Liu, Jinhan Zhang et al. · IEEE Electron Device Letters · 2015 · 60 citations

Wide-bandgap Semiconductor, High-temperature Gate Recess, Engineering +17

Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures

Jinhan Zhang, Xuanwu Kang, Xinhua Wang et al. · IEEE Electron Device Letters · 2018 · 59 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11