Yingkui Zheng

Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices

Sen Huang, Xinyu Liu, Xinhua Wang et al. · IEEE Transactions on Electron Devices · 2017 · 116 citations

Engineering, Electrical Engineering, Materials Engineering +17

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

Yue Sun, Xuanwu Kang, Yingkui Zheng et al. · Electronics · 2019 · 100 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Robust SiN<sub><italic>x</italic></sub>/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiN<sub><italic>x</italic></sub> Layer

Xinhua Wang, Sen Huang, Yingkui Zheng et al. · IEEE Electron Device Letters · 2015 · 75 citations

Engineering, Electrical Engineering, Materials Science +16

High RF Performance Enhancement-Mode Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique

Sen Huang, Xinyu Liu, Jinhan Zhang et al. · IEEE Electron Device Letters · 2015 · 60 citations

Engineering, Electrical Engineering, Materials Science +17

Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures

Jinhan Zhang, Xuanwu Kang, Xinhua Wang et al. · IEEE Electron Device Letters · 2018 · 60 citations

Engineering, Electrical Engineering, Materials Science +17