High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer - Concepedia

Concepedia

Publication | Open Access

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

DOI Full Paper Access

39

Citations

30

References

2019

Year

Chao Yang, Xiaorong Luo, Tao Sun, Anbang Zhang, Dongfa Ouyang, Siyu Deng, Jie Wei, Bo Zhang

Nanoscale Research Letters

References

	Year	Citations

Page 1