Chao Yang - Concepedia

Author

Chao Yang

University of Electronic Science and Technology of China ORCID

Also Known As

C Yang, Chao Chen Yang, Chao Yang

Publications

361

Citations

H-Index

Concepts

All Affiliations

University of Electronic Science and Technology of China National Engineering Research Center of Electromagnetic Radiation Control Materials Hainan University Dalian University State Key Laboratory on Integrated Optoelectronics

About

Chao Yang is an author at University of Electronic Science and Technology of China specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	8	8	163
2	Applied Physics	6	6	83
3	Social Sciences	1	1	13
4	Chemical Engineering	1	1	34
5	Chemistry	1	1	34

Chao Yang

Publications

277

Citations

H-Index

Page 1

	Year	Citations
High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer Chao Yang, Xiaorong Luo, Tao Sun, Nanoscale Research Letters	2019	39
Exploration of Cr0.2Fe0.8Nb11O29 as an advanced anode material for lithium-ion batteries of electric vehicles Xiaoming Lou, Zhihao Xu, Zhibin Luo, Electrochimica Acta Materials ScienceElectrical EngineeringEngineeringBattery Electrode MaterialsAdvanced Anode Material	2017	36
TiNb<sub>2</sub>O<sub>7</sub> nanorods as a novel anode material for secondary lithium-ion batteries Lei Hu, Chunfu Lin, Changhao Wang, Functional Materials Letters EngineeringElectrode-electrolyte InterfaceChemistryChemical EngineeringMaterials Science	2016	34
570 MHz harmonic mode-locking in an all polarization-maintaining Ho-doped fiber laser Chao Yang, Baoquan Yao, Yi Chen, Optics Express PhotonicsMhz Harmonic Mode-lockingKelly SidebandsEngineeringLaser Science	2020	26
AlGaN/GaN MIS-HEMT With AlN Interface Protection Layer and Trench Termination Structure Chao Yang, Xiaorong Luo, Anbang Zhang, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorAluminium NitrideElectrical EngineeringEngineeringTrench Termination Structure	2018	22
High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates Zhifu Zhu, Heqiu Zhang, Hongwei Liang, Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment High-temperature PerformanceSapphire SubstratesPhysicsApplied PhysicsAluminum Gallium Nitride	2018	16
Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application King‐Yuen Wong, Ronghui Hao, Allen Chou, Semiconductor Science and Technology	2021	14
The characteristics of spatial expansion and driving forces of land urbanization in counties in central China: A case study of Feixi county in Hefei city Jiao Huafu, Xiangxiang Zhang, Chao Yang, PLoS ONE Land UseUrban DevelopmentSocial SciencesUrban Land UseLand Urbanization Rate	2021	13
Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer Jiayun Xiong, Chao Yang, Jie Wei, Science China Information Sciences Wide-bandgap SemiconductorElectrical EngineeringEngineeringBuffer LayerApplied Physics	2016	12
Analytical model and new structure of the enhancement-mode polarization-junction HEMT with vertical conduction channel Chao Yang, Jiayun Xiong, Jie Wei, Superlattices and Microstructures Electrical EngineeringEngineeringElectronic EngineeringApplied PhysicsVertical Conduction Channel	2016	12

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