Anbang Zhang

7.6 V Threshold Voltage High-Performance Normally-Off Al₂O₃/GaN MOSFET Achieved by Interface Charge Engineering

Qi Zhou, Li Liu, Anbang Zhang et al. · IEEE Electron Device Letters · 2015 · 100 citations

Materials Engineering, Interface Charge Engineering, Electrical Engineering +13

Carrier Transport Mechanisms Underlying the Bidirectional <inline-formula> <tex-math notation="LaTeX">${V}_{\mathrm{{TH}}}$ </tex-math> </inline-formula> Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Yuanyuan Shi, Qi Zhou, Cheng Qian et al. · IEEE Transactions on Electron Devices · 2018 · 77 citations

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Chao Yang, Xiaorong Luo, Tao Sun et al. · Nanoscale Research Letters · 2019 · 39 citations · Full text

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

Yuanyuan Shi, Qi Zhou, Anbang Zhang et al. · Nanoscale Research Letters · 2017 · 25 citations · Full text

AlGaN/GaN MIS-HEMT With AlN Interface Protection Layer and Trench Termination Structure

Chao Yang, Xiaorong Luo, Anbang Zhang et al. · IEEE Transactions on Electron Devices · 2018 · 22 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Electrical Engineering +11