Qi Zhou

Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs

Ronghui Hao, Weiyi Li, Kai Fu et al. · IEEE Electron Device Letters · 2017 · 124 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

Qi Zhou, Jin Yang, Yuanyuan Shi et al. · IEEE Electron Device Letters · 2015 · 106 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiN_<i>x</i> Passivation and High-Temperature Gate Recess

Yijun Shi, Sen Huang, Qilong Bao et al. · IEEE Transactions on Electron Devices · 2016 · 105 citations

Semiconductors, Deep States, Electrical Engineering +14

7.6 V Threshold Voltage High-Performance Normally-Off Al₂O₃/GaN MOSFET Achieved by Interface Charge Engineering

Qi Zhou, Li Liu, Anbang Zhang et al. · IEEE Electron Device Letters · 2015 · 100 citations

Materials Engineering, Interface Charge Engineering, Electrical Engineering +13

High-Performance Enhancement-Mode Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/AlGaN/GaN-on-Si MISFETs With 626 MW/&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\mathrm{cm}^{2}$ &lt;/tex-math&gt;&lt;/inline-formula&gt; Figure of Merit

Qi Zhou, Bowen Chen, Jin Yang et al. · IEEE Transactions on Electron Devices · 2015 · 86 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15