Yuanyuan Shi

High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode

Qi Zhou, Jin Yang, Yuanyuan Shi et al. · IEEE Electron Device Letters · 2015 · 106 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

7.6 V Threshold Voltage High-Performance Normally-Off Al₂O₃/GaN MOSFET Achieved by Interface Charge Engineering

Qi Zhou, Li Liu, Anbang Zhang et al. · IEEE Electron Device Letters · 2015 · 100 citations

Materials Engineering, Interface Charge Engineering, Electrical Engineering +13

Carrier Transport Mechanisms Underlying the Bidirectional <inline-formula> <tex-math notation="LaTeX">${V}_{\mathrm{{TH}}}$ </tex-math> </inline-formula> Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Yuanyuan Shi, Qi Zhou, Cheng Qian et al. · IEEE Transactions on Electron Devices · 2018 · 77 citations

Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection

Yuanyuan Shi, Qi Zhou, Cheng Qian et al. · 2018 · 54 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +10

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

Yuanyuan Shi, Qi Zhou, Anbang Zhang et al. · Nanoscale Research Letters · 2017 · 25 citations · Full text