Xiaorong Luo

A Novel 700-V SOI LDMOS With Double-Sided Trench

Xiaorong Luo, Bo Zhang, Zhaoji Li et al. · IEEE Electron Device Letters · 2007 · 105 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Field Enhancement for Dielectric Layer of High-Voltage Devices on Silicon on Insulator

Bo Zhang, Zhaoji Li, Shengdong Hu et al. · IEEE Transactions on Electron Devices · 2009 · 82 citations

Electrical Engineering, Dielectric Layer, Engineering +13

Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET

Xiaorong Luo, Jie Fan, Yuangang Wang et al. · IEEE Electron Device Letters · 2010 · 81 citations

Low-power Electronics, Electrical Engineering, Semiconductor Device +11

A new structure and its analytical model for the electric field and breakdown voltage of SOI high voltage device with variable-k dielectric buried layer

Xiaorong Luo, Bo Zhang, Zhaoji Li · Solid-State Electronics · 2007 · 79 citations

Electrical Engineering, Engineering, High Voltage Engineering +8

New High-Voltage ($>$ 1200 V) MOSFET With the Charge Trenches on Partial SOI

Xiaorong Luo, Bo Zhang, Zhaoji Li · IEEE Transactions on Electron Devices · 2008 · 75 citations

Electrical Engineering, Semiconductor Device, Engineering +13