AlGaN/GaN MIS-HEMT With AlN Interface Protection Layer and Trench Termination Structure

Abstract

In this brief, an AlGaN/GaN metal-insulator- semiconductor high-electron-mobility transistor (MISHEMT) with pulsed laser deposited AlN interface protection layer (IPL) and trench termination (T <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) structure is experimentally and theoretically investigated. The AlN IPL could effectively improve the interface quality and reduce the interface trap density, which is verified by frequency-dependent C-V measurement and conductance method. The T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> structure extends the depletion region and increases the average electric field (E-field) strength between the gate and drain, achieving an enhanced breakdown voltage (BV). The measured BV and saturated output current density are 412 V and 505 mA/mm for the device at L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> /L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> /L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> /W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> = 1.5/1.5/5/10 μm, respectively. Compared with the MIS-HEMT without T <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> structure, the proposed device increases the BV by 63%.