A 2-D Modeling of Fe doped Dual Material Gate AlGaN/AlN/GaN High Electron Mobility Transistors for High Frequency Applications

Very-high power density AlGaN/GaN HEMTs

Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 558 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/AlN/GaN high-power microwave HEMT

L. Shen, S. Heikman, Brendan Moran et al. · IEEE Electron Device Letters · 2001 · 494 citations

Engineering, Electrical Engineering, Materials Science +17

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Wataru Saito, Yoshiharu Takada, Masahiko Kuraguchi et al. · IEEE Transactions on Electron Devices · 2003 · 403 citations

Engineering, Electrical Engineering, Materials Science +17

A charge-oriented model for MOS transistor capacitances

D.E. Ward, R.W. Dutton · IEEE Journal of Solid-State Circuits · 1978 · 402 citations

Engineering, Computer Engineering, Electrical Engineering +17

Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

Gregg H. Jessen, Robert Fitch, J. Gillespie et al. · IEEE Transactions on Electron Devices · 2007 · 334 citations

Engineering, Electrical Engineering, Materials Science +17