N. B. Balamurugan

Growth of TGS single crystal by conventional and SR method and its analysis on the basis of mechanical, thermal, optical and etching studies

Muthu Senthil Pandian, N. B. Balamurugan, V. Ganesh et al. · Materials Letters · 2008 · 87 citations

Natural Sciences, Materials Engineering, Materials Science +14

Investigation of the Growth Rate Formula and Bulk Laser Damage Threshold KDP Crystal Growth from Aqueous Solution by the Sankaranarayanan-Ramasamy (SR) Method

N. B. Balamurugan · Crystal Growth & Design · 2006 · 79 citations

Natural Sciences, Materials Engineering, Materials Science +16

Characterization of 〈010〉 directed KAP single crystals grown by Sankaranarayanan–Ramasamy (SR) method

Muthu Senthil Pandian, N. B. Balamurugan, G. Bhagavannarayana · Journal of Crystal Growth · 2008 · 68 citations

Natural Sciences, Materials Engineering, Materials Science +14

New dual material double gate junctionless tunnel FET: Subthreshold modeling and simulation

G. Lakshmi Priya, N. B. Balamurugan · AEU - International Journal of Electronics and Communications · 2018 · 64 citations

Engineering, Electrical Engineering, Materials Science +12

Unidirectional growth of sulphamic acid single crystal and its quality analysis using etching, microhardness, HRXRD, UV–visible and Thermogravimetric-Differential thermal characterizations

Muthu Senthil Pandian, Urit Charoen In, Prapun Manyum et al. · Journal of Crystal Growth · 2009 · 60 citations

Natural Sciences, Materials Engineering, Materials Science +15