IEEE Journal of Solid-State Circuits · 1978 · 402 citations · 3 references
EngineeringComputer EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesCmos Circuit DesignCurrent-voltage CharacteristicsDevice ModelingDevice SimulationIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsCapacitanceCapacitance ModelingCharge DistributionCurrentsField-effect Transistor SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingMos Capacitance SimulationTransient Device Modeling
A new model for computer simulation of capacitance effects in MOS transistors is presented. Transient currents are found directly from the charge distribution in the device rather than from capacitances. The effective capacitances which result are nonreciprocal. The model guarantees conservation of charge and includes bulk capacitances. Several circuit examples are considered.
3
MOS models and circuit simulations
Johannes Meyer · Medical Entomology and Zoology · 1971 · 202 citations
Engineering, Computer Engineering, Electrical Engineering +14