Modeling of retention time distribution of DRAM cell using a Monte-Carlo method

Abstract

A comprehensive Monte-Carlo method for the simulation of the data retention time distribution of DRAM cell has been developed using the current Green's function in the calculation of leakage current. The Monte-Carlo simulation results including the trap-assisted tunneling and the stress-induced bandgap narrowing models show that our model can explain the effects of the wide range of the bias, doping, and mechanical stress on the retention time distribution for both the main and tail parts of the cells.