Memory Device Simulation is a computational modeling approach within device simulation that specifically characterizes the electrical behavior and performance of non-volatile memory devices by numerically solving physical equations governing charge storage, transport, and retention mechanisms.
462
Publications
18.4K
Citations
1.6K
Authors
355
Institutions
Publications per year
2017–2026
105
Parents
Publications
462
1–5 of 462
Authors
1.6K
- DI
18
h-index
- AL
17
h-index
- LL
16
h-index
- AP
15
h-index
- AS
12
h-index
1–5 of 1.6K
Institutions
355
Politecnico di Milano
Milan, Italy
22 h-index
113 publications
5.7K citations
Institute of Microelectronics
Beijing, China
17 h-index
124 publications
5.1K citations
University of Modena and Reggio Emilia
Modena, Italy
17 h-index
72 publications
2.3K citations
Chinese Academy of Sciences
Beijing, China
17 h-index
81 publications
3.2K citations
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Paris, France
15 h-index
79 publications
3K citations
Stanford University
Stanford, United States
15 h-index
51 publications
4.6K citations
CEA Grenoble
Grenoble, France
15 h-index
76 publications
2.9K citations
Laboratoire d'Électronique des Technologies de l'Information
Grenoble, France
14 h-index
67 publications
2.6K citations
1–8 of 355
Venues
- IEEE Transactions on Electron Devices
69 publications · 3.8K citations
30
h-index
- IEEE Electron Device Letters
29 publications · 1.3K citations
20
h-index
- Journal of Applied Physics
13 publications · 798 citations
13
h-index
- Applied Physics Letters
18 publications · 531 citations
13
h-index
- IEEE Transactions on Nuclear Science
18 publications · 727 citations
13
h-index
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