Atsushi Hiraiwa

Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

Y. Kitabayashi, Takuya Kudo, Hidetoshi Tsuboi et al. · IEEE Electron Device Letters · 2017 · 193 citations

Diamond-like Carbon, Electrical Engineering, Engineering +8

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

Hiroshi Kawarada, Hidetoshi Tsuboi, T. Naruo et al. · Applied Physics Letters · 2014 · 179 citations

Semiconductors, Materials Science, Electrical Engineering +14

3.8 W/mm RF Power Density for ALD Al₂O₃-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity

Shoichiro Imanishi, Kiyotaka Horikawa, Nobutaka Oi et al. · IEEE Electron Device Letters · 2018 · 125 citations · Full text

Aluminium Nitride, Semiconductor Technology, Electrical Engineering +12

Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

Hiroshi Kawarada, Tetsuya Yamada, Dechen Xu et al. · Scientific Reports · 2017 · 107 citations · Full text

High-reliability passivation of hydrogen-terminated diamond surface by atomic layer deposition of Al2O3

Akira Daicho, Tatsuya Saito, Shinichiro Kurihara et al. · Journal of Applied Physics · 2014 · 82 citations

Materials Science, Diamond-like Carbon, High-reliability Passivation +14