Y. Kitabayashi

Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

Y. Kitabayashi, Takuya Kudo, Hidetoshi Tsuboi et al. · IEEE Electron Device Letters · 2017 · 201 citations

Engineering, Electrical Engineering, Materials Science +16

Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

Hiroshi Kawarada, Tetsuya Yamada, Dechen Xu et al. · Scientific Reports · 2017 · 113 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Diamond MOSFETs using 2D hole gas with 1700V breakdown voltage

Hiroshi Kawarada, Tetsuya Yamada, Dianguo Xu et al. · 2016 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor

Mohd Syamsul, Y. Kitabayashi, Daisuke Matsumura et al. · Applied Physics Letters · 2016 · 33 citations

Engineering, Electrical Engineering, Materials Science +15

High Voltage Stress Induced in Transparent Polycrystalline Diamond Field-Effect Transistor and Enhanced Endurance Using Thick Al₂O₃Passivation Layer

Mohd Syamsul, Y. Kitabayashi, Takuya Kudo et al. · IEEE Electron Device Letters · 2017 · 26 citations

Engineering, Electrical Engineering, Materials Science +17