Mohd Syamsul

Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

Y. Kitabayashi, Takuya Kudo, Hidetoshi Tsuboi et al. · IEEE Electron Device Letters · 2017 · 201 citations

Engineering, Electrical Engineering, Materials Science +16

High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor

Mohd Syamsul, Y. Kitabayashi, Daisuke Matsumura et al. · Applied Physics Letters · 2016 · 33 citations

Engineering, Electrical Engineering, Materials Science +15

Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications

Mohd Syamsul, Nobutaka Oi, S. Okubo et al. · IEEE Electron Device Letters · 2017 · 27 citations

Engineering, Electrical Engineering, Materials Science +13

High Voltage Stress Induced in Transparent Polycrystalline Diamond Field-Effect Transistor and Enhanced Endurance Using Thick Al₂O₃Passivation Layer

Mohd Syamsul, Y. Kitabayashi, Takuya Kudo et al. · IEEE Electron Device Letters · 2017 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

Role of Carboxyl and Amine Termination on a Boron-Doped Diamond Solution Gate Field Effect Transistor (SGFET) for pH Sensing

Shaili Falina, Sora Kawai, Nobutaka Oi et al. · Sensors · 2018 · 17 citations · Full text

Natural Sciences, Chemistry, Materials Science +17