IEEE Electron Device Letters · 2017 · 27 citations · 21 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor HeterostructuresWide-bandgap Semiconductor DevicesBreakdown VoltageCurrent DensityDiamond Semiconductor DevicesDiamond Semiconductors
The exceptional performance of diamondbased field-effect transistor technology is not restricted to devices that use single crystallinediamond alone. This letter explores the full potential of the heteroepitaxial diamond field-effect transistor (HED-FET). HED-FET devices were fabricated with a long gate-drain length (L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> ) configuration using C-H bonded channels, and a high maximum current density of 80 mA/mm and a high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> were achieved. Additionally, the HED-FETs showed an average breakdown voltage of ≥500 V and comparatively high breakdown voltage of more than 1 kV. This letter represents a significant step toward the realization of the potential of widely available heteroepitaxial diamond for use in FET applications.
21