S. Okubo

3.8 W/mm RF Power Density for ALD Al₂O₃-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity

Shoichiro Imanishi, Kiyotaka Horikawa, Nobutaka Oi et al. · IEEE Electron Device Letters · 2018 · 125 citations · Full text

Aluminium Nitride, Semiconductor Technology, Electrical Engineering +12

Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

Nobutaka Oi, Masafumi Inaba, S. Okubo et al. · Scientific Reports · 2018 · 57 citations · Full text

Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation

Nobutaka Oi, Takuya Kudo, Masafumi Inaba et al. · IEEE Electron Device Letters · 2019 · 54 citations

Semiconductor Technology, Diamond-like Carbon, Electrical Engineering +9

Magnetic field effects on fractal morphology in electrochemical deposition

Iwao Mogi, Masao Kamiko, S. Okubo · Physica B Condensed Matter · 1995 · 46 citations

Materials Science, Magnetism, Magnetic Properties +8

Development of multi-frequency ESR system for high-pressure measurements up to 2.5 GPa

Takahiro Sakurai, K. Fujimoto, Ryosuke Matsui et al. · Journal of Magnetic Resonance · 2015 · 34 citations

Engineering, High-pressure Measurements, Measurement +5