Kiyotaka Horikawa

3.8 W/mm RF Power Density for ALD Al₂O₃-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity

Shoichiro Imanishi, Kiyotaka Horikawa, Nobutaka Oi et al. · IEEE Electron Device Letters · 2018 · 125 citations · Full text

Aluminium Nitride, Semiconductor Technology, Electrical Engineering +12

Over 12000 A/cm²and 3.2 m$\Omega$ cm²Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET

Masayuki Iwataki, Nobutaka Oi, Kiyotaka Horikawa et al. · IEEE Electron Device Letters · 2019 · 39 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +9

Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts

Shoichiro Imanishi, Ken Kudara, Hitoshi Ishiwata et al. · IEEE Electron Device Letters · 2020 · 39 citations

Semiconductor Technology, Diamond-like Carbon, Electrical Engineering +10

Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

Atsushi Hiraiwa, Toshio Sasaki, S. Okubo et al. · Journal of Applied Physics · 2018 · 28 citations

Semiconductors, Materials Science, Electrical Engineering +13

Low ON-Resistance (2.5 mΩ · cm²) Vertical-Type 2-D Hole Gas Diamond MOSFETs With Trench Gate Structure

Jun Tsunoda, Masayuki Iwataki, Kiyotaka Horikawa et al. · IEEE Transactions on Electron Devices · 2021 · 12 citations

Electrical Engineering, Engineering, Favored Materials +9