Kiyotaka Horikawa - Concepedia

Author

Kiyotaka Horikawa

Waseda University ORCID

Also Known As

Kiyotaka Horikawa

Publications

296

Citations

H-Index

Concepts

All Affiliations

Waseda University Nagoya University

About

Kiyotaka Horikawa is an author at Waseda University specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	264
2	Applied Physics	7	7	264
3	Electrical Engineering	7	7	264
4	Materials Science	2	2	38
5	Materials Engineering	1	1	10

Kiyotaka Horikawa

Publications

264

Citations

H-Index

Page 1

	Year	Citations
3.8 W/mm RF Power Density for ALD Al<sub>2</sub>O<sub>3</sub>-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity Shoichiro Imanishi, Kiyotaka Horikawa, Nobutaka Oi, IEEE Electron Device Letters Aluminium NitrideSemiconductor TechnologyElectrical EngineeringDiamond-like CarbonEngineering	2018	125
Over 12000 A/cm<sup>2</sup>and 3.2 m$\Omega$ cm<sup>2</sup>Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET Masayuki Iwataki, Nobutaka Oi, Kiyotaka Horikawa, IEEE Electron Device Letters Device ModelingSemiconductor TechnologyElectrical EngineeringGate-source Overlapping StructureEngineering	2019	39
Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts Shoichiro Imanishi, Ken Kudara, Hitoshi Ishiwata, IEEE Electron Device Letters Semiconductor TechnologyDiamond-like CarbonElectrical EngineeringPlasma ElectronicsEngineering	2020	39
Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN Atsushi Hiraiwa, Toshio Sasaki, S. Okubo, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringWide-bandgap SemiconductorEngineering	2018	28
Low ON-Resistance (2.5 mΩ · cm<sup>2</sup>) Vertical-Type 2-D Hole Gas Diamond MOSFETs With Trench Gate Structure Jun Tsunoda, Masayuki Iwataki, Kiyotaka Horikawa, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringFavored MaterialsElectronic EngineeringApplied Physics	2021	12
Gate/insulator-interfacial-dipole-controlled current conduction in Al2O3 metal-insulator-semiconductor capacitors S. Okubo, Kiyotaka Horikawa, Hiroshi Kawarada, Journal of Applied Physics Oxide HeterostructuresSemiconductorsElectrical EngineeringAluminium NitrideEngineering	2019	11
Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN Kiyotaka Horikawa, S. Okubo, Hiroshi Kawarada, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Wide-bandgap SemiconductorAluminium NitrideEngineeringAl2o3 GrowthSemiconductor Device	2020	10

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