Taisuke Kageura

High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures

Yosuke Sasama, Taisuke Kageura, Masataka Imura et al. · Nature Electronics · 2021 · 161 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +3

3.8 W/mm RF Power Density for ALD Al₂O₃-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity

Shoichiro Imanishi, Kiyotaka Horikawa, Nobutaka Oi et al. · IEEE Electron Device Letters · 2018 · 125 citations · Full text

Aluminium Nitride, Semiconductor Technology, Electrical Engineering +12

Nitrogen-Terminated Diamond Surface for Nanoscale NMR by Shallow Nitrogen-Vacancy Centers

Sora Kawai, Hayate Yamano, Takahiro Sonoda et al. · The Journal of Physical Chemistry C · 2019 · 78 citations · Full text

Engineering, Vacuum Device, Chemistry +18

Charge state stabilization of shallow nitrogen vacancy centers in diamond by oxygen surface modification

Hayate Yamano, Sora Kawai, Kanami Kato et al. · Japanese Journal of Applied Physics · 2017 · 64 citations

Materials Science, Diamond-like Carbon, Engineering +15

Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors

Nobutaka Oi, Masafumi Inaba, S. Okubo et al. · Scientific Reports · 2018 · 57 citations · Full text