Hidetoshi Tsuboi

Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage

Y. Kitabayashi, Takuya Kudo, Hidetoshi Tsuboi et al. · IEEE Electron Device Letters · 2017 · 201 citations

Engineering, Electrical Engineering, Materials Science +16

C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

Hiroshi Kawarada, Hidetoshi Tsuboi, T. Naruo et al. · Applied Physics Letters · 2014 · 185 citations

Engineering, Electrical Engineering, Materials Science +17

Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications

Hiroshi Kawarada, Tetsuya Yamada, Dechen Xu et al. · Scientific Reports · 2017 · 113 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17

Quantum oscillations of the two-dimensional hole gas at atomically flat diamond surfaces

T. Yamaguchi, Hiroyuki Okazaki, Keita Deguchi et al. · Physical Review B · 2014 · 34 citations

Natural Sciences, Materials Science, Physics +17

Wide temperature (10K–700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application

Hiroshi Kawarada, Tetsuya Yamada, Dehong Xu et al. · 2014 · 22 citations

Engineering, Electrical Engineering, Materials Science +15