A general partition scheme for gate leakage current suitable for MOSFET compact models

Concepts

Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringStress-induced Leakage CurrentBias Temperature InstabilityGeneral Partition SchemeSource/drain PartitionComputer EngineeringPartition IssueCircuit SimulationInversion ChargeGate LeakageMicroelectronicsCircuit AnalysisMosfet Compact Models

Abstract

For the first time, it is rigorously shown that the source/drain partition of gate leakage current in a MOSFET is identical to that of inversion charge. This paper provides model developers a general recipe in addressing the partition issue and enables more consistent model parameter extraction methodology for MOSFETs in sub-100 nm technology.

References

A charge-oriented model for MOS transistor capacitances

D.E. Ward, R.W. Dutton · IEEE Journal of Solid-State Circuits · 1978 · 398 citations

Device Modeling, Electrical Engineering, Engineering +12

BSIM4 gate leakage model including source-drain partition

Kanyu Cao, W.-C. Lee, Wei Liu et al. · 2002 · 208 citations

Device Modeling, Electrical Engineering, Compact Mosfet Modeling +9

A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects

S. Tyagi, Morteza S. Alavi, R. Bigwood et al. · 2002 · 149 citations

Engineering, Vlsi Design, Dual Vt Transistors +16

Modeling gate and substrate currents due to conduction- and valence-band electron and hole tunneling [CMOS technology]

Wen‐Chin Lee, Chenming Hu · 2002 · 88 citations

Device Modeling, Electrical Engineering, Valence-band Electron +14