Publication | Closed Access
TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs
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Citations
21
References
2016
Year
Wide-bandgap SemiconductorElectrical EngineeringEngineeringAlgan/gan Mis-hemtsApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorOptoelectronics
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