Hee‐Sung Kang

Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

Ki-Won Kim, Sungdal Jung, Dong‐Seok Kim et al. · IEEE Electron Device Letters · 2011 · 167 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +13

Effect of oxygen species on the positive flat-band voltage shift in Al₂O₃/GaN metal–insulator–semiconductor capacitors with post-deposition annealing

Hee‐Sung Kang, M. Siva Pratap Reddy, Dong‐Seok Kim et al. · Journal of Physics D Applied Physics · 2013 · 63 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +14

Low-Temperature Performance of Nanoscale MOSFET for Deep-Space RF Applications

Seung-Ho Hong, Gil-Bok Choi, Rock‐Hyun Baek et al. · IEEE Electron Device Letters · 2008 · 59 citations

Electrical Engineering, Engineering, Radio Frequency +11

Characteristics of GaN and AlGaN/GaN FinFETs

Ki‐Sik Im, Hee‐Sung Kang, Jaehoon Lee · Solid-State Electronics · 2014 · 40 citations

Electrical Engineering, Engineering, Nanoelectronics +5

Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n‐inp schottky barrier interface

M. Siva Pratap Reddy, Hee‐Sung Kang, Jung‐Hee Lee et al. · Journal of Applied Polymer Science · 2013 · 37 citations

Engineering, Richardson Constants, Electrical Properties +17