Sungdal Jung

Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

Ki-Won Kim, Sungdal Jung, Dong‐Seok Kim et al. · IEEE Electron Device Letters · 2011 · 167 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +13

High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN<i>_x</i>surface passivation layer deposited by low pressure CVD

Sung‐Woon Moon, Jong‐Sub Lee, Deokwon Seo et al. · Japanese Journal of Applied Physics · 2014 · 22 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

Charge trapping and interface characteristics in normally-off Al2O3/GaN-MOSFETs

Ki-Won Kim, Sungdal Jung, Dong‐Seok Kim et al. · Microelectronic Engineering · 2011 · 22 citations

Electrical Engineering, Charge Trapping, Engineering +3

600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

Deok Won Seo, Hong Goo Choi, J.K. Twynam et al. · IEEE Electron Device Letters · 2014 · 19 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11