J.K. Twynam

High reliability InGaP/GaAs HBT

N. Pan, J. Elliott, Matthew Knowles et al. · IEEE Electron Device Letters · 1998 · 77 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Self-heating effect compensation in HBTs and its analysis and simulation

Yu Zhu, J.K. Twynam, M. Yagura et al. · IEEE Transactions on Electron Devices · 2001 · 24 citations

Electrical Engineering, Engineering, Rf Semiconductor +13

High-voltage GaN-on-Si hetero-junction FETs with reduced leakage and current collapse effects using SiN<i>_x</i>surface passivation layer deposited by low pressure CVD

Sung‐Woon Moon, Jong‐Sub Lee, Deokwon Seo et al. · Japanese Journal of Applied Physics · 2014 · 22 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14

High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVD

J.K. Twynam, H. Sato, T. Kinosada · Electronics Letters · 1991 · 21 citations

Semiconductor Technology, Mocvd Growth Method, Electrical Engineering +10

Bump heat sink technology - A novel assembly technology suitable for power HBTs

H. Sato, M. Miyauchi, K. Sakuno et al. · 2002 · 21 citations

Low-power Electronics, Novel Assembly Technology, Electrical Engineering +14