N. Pan

Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunctions

M. Asif Khan, J. N. Kuznia, J. M. Van Hove et al. · Applied Physics Letters · 1992 · 237 citations

Engineering, Materials Science, Physics +17

High reliability InGaP/GaAs HBT

N. Pan, J. Elliott, Matthew Knowles et al. · IEEE Electron Device Letters · 1998 · 78 citations

Engineering, Electrical Engineering, Materials Science +17

Hydrogen passivation of C acceptors in high-purity GaAs

N. Pan, Sukanta Bose, M. H. Kim et al. · Applied Physics Letters · 1987 · 73 citations

Engineering, Materials Engineering, Materials Science +17

Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability

T. S. Low, C. Hutchinson, P.C. Canfield et al. · 2002 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

GaAs MOSFET Using InAlP Native Oxide as Gate Dielectric

X. Li, Yu Cao, D. C. Hall et al. · IEEE Electron Device Letters · 2004 · 51 citations

Engineering, Electrical Engineering, Materials Science +17