N. Pan

Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-Al<i>x</i>Ga1−<i>x</i>N heterojunctions

M. Asif Khan, J. N. Kuznia, J. M. Van Hove et al. · Applied Physics Letters · 1992 · 230 citations

Semiconductors, Two-dimensional Electron Gas, Wide-bandgap Semiconductor +13

High reliability InGaP/GaAs HBT

N. Pan, J. Elliott, Matthew Knowles et al. · IEEE Electron Device Letters · 1998 · 77 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Hydrogen passivation of C acceptors in high-purity GaAs

N. Pan, Sukanta Bose, M. H. Kim et al. · Applied Physics Letters · 1987 · 73 citations

Hydrogen Passivation, Electrical Engineering, Semiconductor Device +10

Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability

T. S. Low, C. Hutchinson, P.C. Canfield et al. · 2002 · 58 citations

Electrical Engineering, Fmax Values, Engineering +15

GaAs MOSFET Using InAlP Native Oxide as Gate Dielectric

X. Li, Yu Cao, D. C. Hall et al. · IEEE Electron Device Letters · 2004 · 51 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12