P.C. Canfield

Modeling of frequency and temperature effects in GaAs MESFETs

P.C. Canfield, S.C.F. Lam, D.J. Allstot · IEEE Journal of Solid-State Circuits · 1990 · 87 citations

Device Modeling, Electrical Engineering, Semiconductor Device +10

Migration from an AlGaAs to an InGaP emitter HBT IC process for improved reliability

T. S. Low, C. Hutchinson, P.C. Canfield et al. · 2002 · 58 citations

Electrical Engineering, Fmax Values, Engineering +15

Buried-channel GaAs MESFET's with frequency-independent output conductance

P.C. Canfield, J. Medinger, L. Forbes · IEEE Electron Device Letters · 1987 · 34 citations

Electrical Engineering, Buried-channel Gaas Mesfet, Engineering +8

Supression of drain conductance transients, drain current oscillations, and low-frequency generation—Recombination noise in GaAs FET's using buried channels

P.C. Canfield, L. Forbes · IEEE Transactions on Electron Devices · 1986 · 31 citations

Frequency-dependent transients in GaAs MESFETs: process, geometry and material effects

W. Mickanin, P.C. Canfield, E. P. Finchem et al. · 2003 · 21 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9