L. Forbes

Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfection centers in semiconductors from photo and dark junction current and capacitance experiments

C. T. Sah, L. Forbes, Laurence Rosier et al. · Solid-State Electronics · 1970 · 450 citations

Semiconductors, Photoluminescence, Engineering +8

THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON

C. T. Sah, L. Forbes, L. I. Rosier et al. · Applied Physics Letters · 1969 · 129 citations

Thermal Emission Rates, Electronic Devices, Engineering +12

LOW-TEMPERATURE HIGH-FREQUENCY CAPACITANCE MEASUREMENTS OF DEEP-AND SHALLOW-LEVEL IMPURITY CENTER CONCENTRATIONS

C. T. Sah, Laurence Rosier, L. Forbes · Applied Physics Letters · 1969 · 42 citations

Engineering, Junction Bias, Interconnect (Integrated Circuits) +16

A self-backgating GaAs MESFET model for low-frequency anomalies

M. Lee, L. Forbes · IEEE Transactions on Electron Devices · 1990 · 41 citations

Device Modeling, Analytical Capacitance Model, Electrical Engineering +13

Texturing, reflectivity, diffuse scattering and light trapping in silicon solar cells

L. Forbes · Solar Energy · 2011 · 38 citations

Materials Science, Engineering, Diffuse Scattering +10